PNM723T30V01 Overview
Description
PNM723T30V01 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. PNM723T30V01 N-Channel MOSFET VDS(V) 30 MOSFET Product Summary RDS(on)(Ω) VGS(th)(V) 7@ VGS=2.5V,ID=10mA 0.5 to 1.5 Mechanical data - Halogen Free ID(A) 0.1 D（3） G（1） S（2） Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Source-Drain Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Conditions OFF CHARACTERISTICS VDSS ID =10μA,VGS=0V IDSS VDS =30V,VGS=0V IGSS VDS =0V,VGS=±20V VGS(th) VDS =VGS, ID =250μA VGS=2.5V, ID =1mA RDS(ON) VGS=2.5V, ID =10mA VGS=4V, ID =10mA VGS=10V, ID =100mA gFS VDS=5V, ID =0.1A VFSD (V) ID=100mA,VGS=0V DYNAMIC PARAMETERS CISS COSS CRSS VGS=0V, VDS =15V, f=1MHz Min.
