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Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.3@ VGS=4.5V
0.6
PNMET20V06 N-Channel MOSFET
D（3）
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
BVDSS IDSS IGSS VGS(th)
RDS(ON)
ID =250μA,VGS=0V VDS =20V,VGS=0V VDS =0V,VGS=±8V VDS =VGS, ID =250μA VGS=4.5V, ID =0.6A VGS=2.5V, ID =0.5A VGS=1.8V, ID =0.
PNMET20V06 Datasheet
