PNMTOF600V4 Overview
Description
The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600 MOSFET Product Summary RDS(on)(Ω) ID(A) 1.9@ VGS=10V 4 G（1） S（3） Parameter Symbol Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Tran conductance Diode Forward Voltage Maximum Body-Diode Continuous Current Maximum Body-Diode Pulse Current BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM ID =250μA,VGS=0V VDS =600V,VGS=0V VDS =0V,VGS=±30V VDS =VGS, ID =250μA VGS=10V, ID =0.65A VDS =40V, ID =2A IS=1A,VGS=0V DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS=0V, VDS =25V, f=1MHz SWITCHING PARAMETERS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time td(on) td(off) tr tf VDS=300V, VGS =10V, RG=25Ω, ID =4A Min.
