PNMUT20V06 - N-Channel MOSFET

Prisemi

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

PNMUT20V06 n-channel mosfet by Prisemi - Datasheet Preview

Datasheet Details

Part number	PNMUT20V06
Manufacturer	Prisemi
File Size	137.75 KB
Description	N-Channel MOSFET
Datasheet	PNMUT20V06 Datasheet

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Full PDF Text Transcription (Reference)

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.3@ VGS=4.5V 0.6 PNMUT20V06 N-Channel MOSFET D（3） G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS ID =250μA,VGS=0V IDSS VDS =20V,VGS=0V IGSS VDS =0V,VGS=±10V VGS(th) VDS =VGS, ID =250μA VGS=4.5V, ID =0.6A RDS(ON) VGS=2.5V, ID =0.5A VGS=1.8V, ID =0.