PPM523T201E0 Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness. -1 ±10 -1.1 0.7 0.85 1.2 -1.2 Units V μA μA V Ω Ω Ω s pF pF pF ns ns ns ns nC nC nC V Rev.06.7 2 .prisemi. Typical transfer characteristics 10000 VGS=-4.5V Pulsed 1000 TA=125℃ TA=75℃ TA=25℃ TA=-25℃ Static Drain-Source On-State Resistance:.