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PPM6N12V10 - P-Channel MOSFET

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PPM6N12V10
Manufacturer Prisemi
File Size 247.37 KB
Description P-Channel MOSFET
Datasheet download datasheet PPM6N12V10 Datasheet

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N12V10 P-Channel MOSFET VDS(V) -12 MOSFET Product Summary RDS(on)(mΩ) ID(A) 12 @ VGS=-4.5V -10 Internal structure （D）1 （D）2 （G）3 6（D） 5（D） 4（S） Bottom View （D） （D） （G） 1 2 3 D S 6 5 4 （D） （D） （S） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed TA=25℃ TA=70℃ TA=25℃ Total Power Dissipation TA=125℃ Operating and Storage Junction Temperature Range Symbol VDS VGS ID ID PD PD TJ,TSTG Thermal Characteristics Parameter Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1b) Symbol RθJA RθJA RθJC Value -12 ±8.0 -10 -40 2.4 0.