PPM6N12V10 Description
The enhancement mode MOS is extremely high density cell and low on-resistance. 52 145 6.9 Units ℃/W Rev.06.6 1 .prisemi. P-Channel MOSFET Typical Characteristics 40 VGS=-3V VGS=-4.5V 30 VGS=-2.5V 20 VGS=-1.8V Drain-to-Source Current:.