PPM723T30V02E - P-Channel MOSFET

Prisemi

General Description

The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.

Low On-resistance.

Low Gate Threshold Voltage Fast Switching

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PPM723T30V02E p-channel mosfet by Prisemi - Datasheet Preview

Datasheet Details

Part number	PPM723T30V02E
Manufacturer	Prisemi
File Size	352.27 KB
Description	P-Channel MOSFET
Datasheet	PPM723T30V02E Datasheet

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) -30 RDS(on)(Ω) 0.48@ VGS = -10V 0.68@ VGS = -4.5V 0.75@ VGS = -4V ID(mA) -200 Feature  Low On-resistance.  Low Gate Threshold Voltage  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate Applications  Switching  Power Management Functions Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current Maximum Power Dissipation Junction and Storage Temperature Range Thermal Resistance Junction-to-Ambient Notes: 1.Pw≤10μs,Duty cycle≤1% 2.Each terminal mounted on a recommended land Rev.