PPMET20V08 Overview
Description
The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.85@ VGS=-4.5V -0.8 1.2@ VGS=-2.5V -0.5 G（1） S（2） Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Tran conductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS ID =-250μA,VGS=0V VDS =20V,VGS=0V VDS =0V,VGS=±10V VDS =VGS, ID =-250μA VGS=-4.5V, ID =-0.8A VGS=-2.5V, ID =-0.5A VGS=5V, ID =50mA, TA=125℃ DYNAMIC PARAMETERS CISS CDSS CRSS VGS=0V, VDS =-6V, f=200KMHz SWITCHING PARAMETERS td(on) td(off) VDD=-6V, VGS =-4.5V, RL=6Ω, RG=6Ω, ID =-1A Min.
