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PPMET20V08 - P-Channel MOSFET

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PPMET20V08
Manufacturer Prisemi
File Size 143.34 KB
Description P-Channel MOSFET
Datasheet download datasheet PPMET20V08 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PPMET20V08 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.85@ VGS=-4.5V -0.8 1.2@ VGS=-2.5V -0.5 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Tran conductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS ID =-250μA,VGS=0V VDS =20V,VGS=0V VDS =0V,VGS=±10V VDS =VGS, ID =-250μA VGS=-4.5V, ID =-0.8A VGS=-2.5V, ID =-0.