PPT8N30E2 Description
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. Very low collector to emitter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar silicon transistor Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Pulse width=300μs, Duty Cycle<2% Note.