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PSBDBFXXXV5 Schottky Barrier diode
Feature
¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
Mechanical Characteristics
¾ Case: SMBF ¾ Terminals : Solderable per MIL-STD-750, Method 2026 ¾ Approx. Weight: 57mg 0.002oz
Absolute maximum rating@25℃
Ratings at 25℃ambient temperature unless otherwise specified.