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V58C2256404SC Datasheet 256 Mbit DDR SDRAM

Manufacturer: ProMOS Technologies

Download the V58C2256404SC datasheet PDF. This datasheet also includes the V58C2256164SC variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (V58C2256164SC_ProMOSTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V58C2256404SC
Manufacturer ProMOS Technologies
File Size 1.02 MB
Description 256 Mbit DDR SDRAM
Download V58C2256404SC Download (PDF)

General Description

The V58C2256(804/404/164)SC*I is a four bank DDR DRAM organized as 4 banks x 8Mbit x 8 (804), 4 banks x 4Mbit x 16 (164), or 4 banks x 16Mbit x 4 (404).

The V58C2256(804/404/164)SC*I achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.

All of the control, address, circuits are synchronized with the positive edge of an externally supplied clock.

Overview

www.DataSheet.co.kr V58C2256(804/404/164)SC*I 256 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B DDR400 Clock Cycle Time (tCK2) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK3) System Frequency (fCK max) 7.5 ns 5ns 5ns 200 MHz 5 DDR400 7.5 ns 6ns 5ns 200 MHz 6 DDR333 7.5 ns 6 ns 6 ns 166 MHz 7 DDR266 7.

Key Features

  • High speed data transfer rates with system frequency up to 200 MHz.
  • Data Mask for Write Control.
  • Four Banks controlled by BA0 & BA1.
  • Programmable CAS Latency: 2, 2.5, 3.
  • Programmable Wrap Sequence: Sequential or Interleave.
  • Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type.
  • Automatic and Controlled Precharge Command.
  • Power Down Mode.
  • Auto Refresh and Self Refresh.
  • Refresh Interval: 8192 cycles/64 ms.
  • Availab.

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