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V58C2256404SC - 256 Mbit DDR SDRAM

This page provides the datasheet information for the V58C2256404SC, a member of the V58C2256164SC 256 Mbit DDR SDRAM family.

Description

The V58C2256(804/404/164)SC

I is a four bank DDR DRAM organized as 4 banks x 8Mbit x 8 (804), 4 banks x 4Mbit x 16 (164), or 4 banks x 16Mbit x 4 (404).

I achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and th

Features

  • High speed data transfer rates with system frequency up to 200 MHz.
  • Data Mask for Write Control.
  • Four Banks controlled by BA0 & BA1.
  • Programmable CAS Latency: 2, 2.5, 3.
  • Programmable Wrap Sequence: Sequential or Interleave.
  • Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type.
  • Automatic and Controlled Precharge Command.
  • Power Down Mode.
  • Auto Refresh and Self Refresh.
  • Refresh Interval: 8192 cycles/64 ms.
  • Availab.

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Datasheet preview – V58C2256404SC

Datasheet Details

Part number V58C2256404SC
Manufacturer ProMOS Technologies
File Size 1.02 MB
Description 256 Mbit DDR SDRAM
Datasheet download datasheet V58C2256404SC Datasheet
Additional preview pages of the V58C2256404SC datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr V58C2256(804/404/164)SC*I 256 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B DDR400 Clock Cycle Time (tCK2) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK3) System Frequency (fCK max) 7.5 ns 5ns 5ns 200 MHz 5 DDR400 7.5 ns 6ns 5ns 200 MHz 6 DDR333 7.5 ns 6 ns 6 ns 166 MHz 7 DDR266 7.5ns 7ns 7 ns 143 MHz Features ■ High speed data transfer rates with system frequency up to 200 MHz ■ Data Mask for Write Control ■ Four Banks controlled by BA0 & BA1 ■ Programmable CAS Latency: 2, 2.
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