* High speed data transfer rates with system frequency up to 200MHz
* Data Mask for Write Control
* Four Banks controlled by BA0 & BA1
* Programmable CAS Latency: 2.5, 3
* Programmable Wrap Sequence: Sequential or Interleave
* Programmable Burst Length: 2, 4, 8 for Sequential
V58C2512164SB Datasheet (0.99 MB)
V58C2512164SB
ProMOS Technologies
0.99 MB
High performance 512m-bit ddr sdram.
www.DataSheet4U.com V58C2512(804/404/164)SB HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit.
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