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Promax Johnton

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PJ2N9012 Datasheet

PNP Epitaxial Silicon Transistor

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PJ2N9012
PNP Epitaxial Silicon Transistor
1W OUTPUT AMPLIFIER OF POTABLE
RADIOS IN CLASS B PUSH-PULL OPERATION
High total power dissipation(PT=625mW)
High collector Current (Ic=-500mA)
Complementary to 2N9013
Excellent hEF Linearity
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS (Ta= 25)
Rating
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
T stg
Value
-40
-20
-5
-500
625
150
-55 ~150
Uint
V
V
V
A
W
0C
0C
ELECTRICAL CHARACTERISTICS(Ta= 25 0C)
P in : 1.Emitter
2.Base
3.Collector
P in : 1. Base
2. Emitter
3. Collector
ORDERING INFORMATION
Device
PJ2N9012CT
PJ2N9012CX
Operating Temperature
-20℃~+85
Package
T O-92
SOT -23
C h aracte ri s ti c
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
hEF CLASSIFICATION
S y m bo l
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(ON)
Te st Conditions
IC= -100μA , IE=0
IC= -1mA , IB=0
IE=-100μA , IC=0
VCB= -25V , IE = 0
VEB= -3V , IC=0
VEB= -1V, IC =-50mA
VEB= -1V, IC =-500mA
IC= -500 mA , IB=-50mA
IC= -500mA , IB=-50mA
VCE =-1V, Ic =-10mA
Mi n
-40
-20
-5
64
40
0.58
Typ Max Unit
V
V
V
-100 nA
-100 nA
120 202
90
0.14 0.3
V
0.84 1.0
V
0.63 0.7
V
Classification
hEF
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
1-3 2002/01.rev.A




Promax Johnton

PJ2N9012 Datasheet Preview

PJ2N9012 Datasheet

PNP Epitaxial Silicon Transistor

No Preview Available !

STATIC CHARACTERISTIC
PJ2N9012
PNP Epitaxial Silicon Transistor
DC CURRENT GAIN
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
CURRENT GAIN-BANDWIDTH PRODUCT
2-3 2002/01.rev.A


Part Number PJ2N9012
Description PNP Epitaxial Silicon Transistor
Maker Promax Johnton
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PJ2N9012 Datasheet PDF






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