PJ2N9012 Datasheet | Promax Johnton

.. PJ2N9012 PNP Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION TO-92 SOT-23 - - - - High total power dissipation(PT=625m W) High collector Current (Ic=-500m A) plementary to 2N9013 Excellent h EF Linearity ABSOLUTE MAXIMUM RATINGS (Ta= 25 ℃ ) Rating Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Value -40 -20 -5 -500 625 150 -55 ~150 Uint V V V A W 0 0 P in : 1.Emitter 2.Base 3.Collector P in : 1. Base 2. Emitter 3. Collector ORDERING INFORMATION Device PJ2N9012CT PJ2N9012CX Operating Temperature -20℃～+85℃ Package TO-92 SOT-23 ELECTRICAL CHARACTERISTICS (Ta= 25 0C) Characte ristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) VBE(ON) Te st Conditions IC= -100μA , IE =0 IC= -1m A , IB=0 IE =-100μA , IC=0 VCB= -25V , IE = 0 VEB= -3V , IC=0 VEB= -1V, IC =-50m A VEB= -1V, IC =-500m A IC= -500 m A , IB=-50m A IC= -500m A , IB=-50m A VCE =-1V, Ic =-10m A Min -40 -20 -5 Typ Max Unit -100 -100 64 40 0.58 120 90 0.14 0.84 0.63 0.3 1.0 0.7 202 n A n A V V V h EF CLASSIFICATION Classification h EF D 64-91 E 78-112 F 96-135 G 112-166 H 144-202 1-3 2002/01.rev.A PJ2N9012 PNP Epitaxial Silicon Transistor STATIC CHARACTERISTIC DC CURRENT...