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Promax Johnton

PJ2N9013 Datasheet Preview

PJ2N9013 Datasheet

NPN Epitaxial Silicon Transistor

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PJ2N9013
NPN Epitaxial Silicon Transistor
1W OUTPUT AMPLIFIER OF POTABLE
RADIOS IN CLAS S B PUS H-PULL OPERATION
High total power dissipation(PT=625mW)
High collector Current (Ic=500mA)
Complementary to PJ2N9012
Excellent hEF Linearity
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
Rating
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
T stg
Value
40
20
5
500
625
150
-55 ~150
Uint
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta= 25°C)
P in : 1. Emitter
2. Base
3. Collector
P in : 1. Base
2. Emitter
3. Collector
ORDERING INFORMATION
Device
PJ2N9013CT
PJ2N9013CX
Operating Temperature
-20℃~+85
Package
T O-92
SOT -23
C h aracte ri s ti c
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
hEF CLASSIFICATION
S y m bo l
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(ON)
Te st Conditions
IC= 100µA , IE=0
IC= 1mA , IB=0
IE=100µA , IC=0
VCB= 25V , IE = 0
VEB= 3V , IC=0
VEB= 1V, IC =50mA
VEB= 1V, IC =500mA
IC= 500 mA , IB=50mA
IC= 500mA , IB=50mA
VCE =1V, Ic =10mA
Min Typ Max Unit
40 V
20 V
5V
100 nA
100 nA
64 120 202
40 90
0.16 0.6
V
0.91 1.2 V
0.6 0.67 0.7
V
Classification
hEF
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
1-3 2002/01.rev.A




Promax Johnton

PJ2N9013 Datasheet Preview

PJ2N9013 Datasheet

NPN Epitaxial Silicon Transistor

No Preview Available !

STATIC CHARACTERISTIC
PJ2N9013
NPN Epitaxial Silicon Transistor
DC CURRENT GAIN
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
CURRENT GAIN-BANDWIDTH PRODUCT
2-3 2002/01.rev.A


Part Number PJ2N9013
Description NPN Epitaxial Silicon Transistor
Maker Promax Johnton
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PJ2N9013 Datasheet PDF






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