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PJ2N9015 PNP Epitaxial Silicon Transistor
PRE-APLIFIER, LOW LEVEL&LOW NOISE • • • High total power dissipation (PT=450mW) High hFE and good linearity Complementary to PJ2N9014
TO-92 SOT-23
ABSOLUTE MAXIMUM RATINGS (T a= 25 °C )
Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating -50 -45 -5 -100 450 150 -55 ~150 Uint V V V mA mW °C °C Device PJ2N9015CT PJ2N9015CX Operating Temperature -20℃~+85℃ Package TO-92 SOT-23
P in : 1. Emitter 2. Base 3. Collector P in : 1.Base 2.Emitter 3.