P4C1026 Datasheet | Pyramid Semiconductor

FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) - 15/20/25/35 ns (mercial/Industrial) - 20/25/35 ns (Military) Low Power .. Single TTL/CMOS patible Outputs Fully TTL patible Inputs Standard Pinout (JEDEC Approved) - 28-Pin 300 mil SOJ - 28-Pin 400 mil SOJ - 28-Pin 400 mil Ceramic DIP - 32-Pin Ceramic LCC 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs DESCRIPTION The P4C1026 is a 1 Meg ultra high speed static RAM organized as 256K x 4. The CMOS memory requires no clock or refreshing and has equal access and cycle times. Inputs and outputs are fully TTL-patible. The RAM operates from a single 5V±10% tolerance power supply. With battery backup, data integrity is maintained for supply voltages down to 2.0V. Access times as fast as 15 nanoseconds are available, permitting greatly enhanced system speeds. CMOS is utilized to reduce power consumption. The P4C1026 is available in a 28-pin 300 mil and 400 mil SOJ packages, as well as Ceramic DIP and LCC packages, providing excellent board level densities. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION SOJ (J5, J7), DIP (C7) LCC(L13) Document # SRAM127 REV E 1 Revised April 2007 MAXIMUM RATINGS(1) Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value - 0.5 to +7 - 0.5 to VCC +0.5 - 55 to +125 Unit V Symbol TBIAS TSTG PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value - 55 to +125 - 65 to +150 1.0 50 Unit °C °C W m A VTERM TA V °C REMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE .. CAPACITANCES(4) VCC = 5.0V, TA = 25°C, f = 1.0MHz Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions Typ. Unit VIN = 0V VOUT = 0V 7 10 p F p F Grade(2) Ambient Temperature - 40°C to +85°C 0°C to +70°C -55°C to +125°C GND 0V 0V 0V VCC 5.0V ± 10% 5.0V ± 10% 5.0V ± 10% Industrial mercial Military DC ELECTRICAL CHARACTERISTICS Over...