Overview: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL63H5S-A/B/C Tentative Signature of Approval
Approvaed by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
.QSILaser. QL63H5S-A/B/C
InGaAlP Laser Diode Tentative Quantum Semiconductor International Co., Ltd. Ver. 3 2006 ♦OVERVIEW
QL63H5S-A/B/C is a MOCVD grown 635nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 20mW for optoelectronic devices such as Optical Leveler and Modules.
