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QL65E7S-C-L - LASER DIODE

Download the QL65E7S-C-L datasheet PDF (QL65E7S-A-L included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for laser diode.

Features

  • - Visible Light Output : λp = 650 nm - Optical Power Output : 7mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

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Note: The manufacturer provides a single datasheet file (QL65E7S-A-L-QSI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number QL65E7S-C-L
Manufacturer QSI
File Size 160.44 KB
Description LASER DIODE
Datasheet download datasheet QL65E7S-C-L Datasheet
Other Datasheets by QSI

Full PDF Text Transcription

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL65E7S-A/B/C-L Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65E7S-A/B/C-L InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 0 Oct. 2004 ♦OVERVIEW QL65E7S-A/B/C-L is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 7mW and low operation current for optoelectronic devices such as Optical storage & Bar Code Reader.
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