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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :. Model : QL65E7S-A/B/C-L
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315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL65E7S-A/B/C-L
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver. 0 Oct. 2004
♦OVERVIEW
QL65E7S-A/B/C-L is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 7mW and low operation current for optoelectronic devices such as Optical storage & Bar Code Reader.