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QL65F7S-B - LASER DIODE

Download the QL65F7S-B datasheet PDF. This datasheet also covers the QL65F7S-A variant, as both devices belong to the same laser diode family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (QL65F7S-A-QSI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number QL65F7S-B
Manufacturer QSI
File Size 222.51 KB
Description LASER DIODE
Datasheet download datasheet QL65F7S-B Datasheet

Overview

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :.

Model : QL65F7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65F7S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd.

Ver.

1 JAN.

2004 ♦OVERVIEW QL65F7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure.

It's an attractive light source, with a typical light output power of 10mW and low operating current for optoelectronic devices such as Optical Pick-up & Bar Code Reader.

Key Features

  • - Visible Light Output : λp = 650 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.