Overview: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :. Model : QL65F7S-A/B/C
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315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
.QSILaser. QL65F7S-A/B/C
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver. 1 JAN. 2004
♦OVERVIEW
QL65F7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW and low operating current for optoelectronic devices such as Optical Pick-up & Bar Code Reader.
