QL65F7S-B Datasheet | QSI

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL65F7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 .QSILaser. QL65F7S-A/B/C In Ga Al P Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 1 JAN. 2004 - OVERVIEW QL65F7S-A/B/C is a MOCVD grown 650nm band In Ga Al P laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10m W and low operating current for optoelectronic devices such as Optical Pick-up & Bar Code Reader. - APPLICATION - Optical Pick-up - Laser Module - Bar Code Reader - Features - Visible Light Output : λp = 650 nm - Optical Power Output : 10m W CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode - ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL65F7SA Fig. 2 QL65F7SB Fig. 3...