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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL78D6S-A/B/C Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL78D6S-A/B/C
AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd
Ver.0 JAN 2004
OVERVIEW
QL78D6S-A/B/C is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for industrial optical module and sensor applications.
APPLICATION
CD-P
FEATURES
Lasing Wavelength
: p = 780nm
Optical Power Output
: 5 CW
Package Type
: TO-18 (5.6mmΦ)
Built-in Photo Diode for Monitoring Laser Output
ELECTRICAL CONNECTION
Bottom View
Pin Configuration
Fig.