QL83I6S-C Description
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : QL83I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer TENTATIVE 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 .QSILaser. QL83I6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd.
QL83I6S-C Key Features
- Visible Light Output : λp = 830 nm
- Optical Power Output : 30mW CW
- Package Type
- Built-in Photo Diode for Monitoring Laser Diode
- ELECTRICAL CONNECTION