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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL83I6S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
TENTATIVE
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL83I6S-A/B/C
AlGaAs Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver.1 Mar. 2010
♦OVERVIEW
QL83I6S-A/B/C is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for industrial optical module and sensor applications.
♦APPLICATION
- Sensor - Industrial Optical Module
♦FEATURES
- Visible Light Output : λp = 830 nm
- Optical Power Output : 30mW CW
- Package Type
: TO-18 (5.