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QL83I6S-C - LASER DIODE

Download the QL83I6S-C datasheet PDF. This datasheet also covers the QL83I6S-A variant, as both devices belong to the same laser diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • - Visible Light Output : λp = 830 nm - Optical Power Output : 30mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (QL83I6S-A-QSI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number QL83I6S-C
Manufacturer QSI
File Size 149.56 KB
Description LASER DIODE
Datasheet download datasheet QL83I6S-C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL83I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer TENTATIVE 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL83I6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver.1 Mar. 2010 ♦OVERVIEW QL83I6S-A/B/C is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for industrial optical module and sensor applications. ♦APPLICATION - Sensor - Industrial Optical Module ♦FEATURES - Visible Light Output : λp = 830 nm - Optical Power Output : 30mW CW - Package Type : TO-18 (5.