QL85J6S-C-L, QL85J6S-A-L Datasheet - QSI

QL85J6S-C-L LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL85J6S-A/B/C-L Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL85J6S-A/B/C-L AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver.1 Aug. 2005 OVERVIEW QL85J6S-A/B/C-L is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typic.

QL85J6S-C-L Features

* - Visible Light Output : λp = 850 nm - Optical Power Output : 40mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode

QL85J6S-A-L-QSI.pdf