0 to 15° s s .200 (5.10) MAX .158 (4.01) .144 (3.68) .020 (.51) MIN .154 (3.90) .120 (3.05) Compact 4-pin package Current transfer ratio in selected groups: H11AA814: 2.

1 4 COLLECTOR ANODE 1 4 COLLECTOR 2 3 EMITTER CATHODE 2 3 EMITTER Equivalent Circuit (H11AA814) Equivalent Circ.

The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. .380 (9.64) MAX .012 (.30) .007 (.20) .055 (1..

H11A817

H11A817A

H11A817B

H11A817D

H11A1

H11A1M

H11A1Z

H11A2

H11A3

H11A4

H11A5

H11A617

H11A617A