HYB18T512161B2F-20 sdram equivalent, 512-mbit x16 ddr2 sdram.
The 512-Mbit Double-Data-Rate-Two SDRAM offers the following key features:
* Data masks (DM) for write data
* 1.8 V ± 0.1V VDD for [
–20/
.
The device is designed to comply with all DDR2 DRAM key features: 1. posted CAS with additive latency, 2. write latency.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS .
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