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QPA3055P - 100W S-Band GaN Power Amplifier

General Description

Data Sheet Rev.

Key Features

  • Frequency Range: 2.9 .
  •  3.5 GHz.
  • PSAT (PIN=25 dBm): 50 dBm.
  • PAE (PIN=25 dBm): > 53 %.
  • Power Gain (PIN=25 dBm): 25 dB.
  • Bias: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm.
  • Alt. Bias: VD = 30 V, IDQ = 1500 mA, PIN = 22 dBm.
  • Characterized at PW = 15 ms, DC = 30%, and PW = 100 us, DC = 10%.
  • Package Dimensions: 15.2 x 15.2 x 3.5 mm Functional Block Diagram Performance is typical across frequency. Please reference electrical spe.

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Datasheet Details

Part number QPA3055P
Manufacturer Qorvo
File Size 636.25 KB
Description 100W S-Band GaN Power Amplifier
Datasheet download datasheet QPA3055P Datasheet

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QPA3055P ® 100 W S-Band GaN Power Amplifier Product Overview Qorvo’s QPA3055P is a packaged, high-power S-band amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process (QGaN25). Covering 2.9 – 3.5 GHz, the QPA3055P provides 100 W of saturated output power and 25 dB of large-signal gain while achieving 53% poweradded efficiency. The QPA3055P is packaged in a 10-lead 15.2 x 15.2 mm bolt-down package with a Cu base for superior thermal management. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both short and long pulse operations. The QPA3055P MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms.