The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
QPA3055P
®
100 W S-Band GaN Power Amplifier
Product Overview
Qorvo’s QPA3055P is a packaged, high-power S-band amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process (QGaN25). Covering 2.9 – 3.5 GHz, the QPA3055P provides 100 W of saturated output power and 25 dB of large-signal gain while achieving 53% poweradded efficiency.
The QPA3055P is packaged in a 10-lead 15.2 x 15.2 mm bolt-down package with a Cu base for superior thermal management. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both short and long pulse operations.
The QPA3055P MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms.