QPA3055D Datasheet | Qorvo

® 100 W S-Band Ga N Power Amplifier Product Overview Qorvo’s QPA3055D is a high-power, S-band amplifier fabricated on Qorvo’s production 0.25 um Ga N on Si C process (QGa N25). Covering 2.9 -  3.6 GHz, the QPA3055D provides 100 W of saturated output power and 25 d B of large-signal gain while achieving 58% poweradded efficiency. The QPA3055D can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both short and long pulse operations. The QPA3055D MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA3055D is ideal for both mercial and military radar systems. Lead-free and Ro HS pliant. Evaluation board available on request. Functional Block Diagram Key Features - Frequency Range: 2.9 -  3.6 GHz - PSAT (PIN=25 d Bm): > 50 d Bm - PAE (PIN=25 d Bm): > 58 % - Power Gain (PIN=25 d Bm): > 25 d B - Bias: VD = 30 V, IDQ = 300 m A, VG = - 2.5 V typical - Characterized at PW = 15 ms, DC = 30%, and PW = 100 us, DC = 10% - Chip Dimensions: 4.890 x 4.890 x 0.100 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications - Radar Ordering Information Part No. QPA3055D QPA3055DEVB Description 100 W S-Band Ga N Power Amplifier (10 Pcs.) Evaluation Board for QPA3055D Data Sheet Rev. D, August 2021 1 of...