QPA3069
QPA3069 is 100W GaN Power Amplifier manufactured by Qorvo.
®
- 3.5 GHz 100 W Ga N Power Amplifier
Product Overview
Qorvo’s QPA3069 is a packaged, high-power S-band amplifier fabricated on Qorvo’s production 0.25 um Ga N on Si C process (QGa N25). Covering 2.7 - 3.5 GHz, the QPA3069 provides 50 d Bm of saturated output power and 25 d B of large-signal gain while achieving 53% poweradded efficiency.
The QPA3069 is packaged in a 7 mm x 7 mm 48-pin plastic overmolded package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages.
The QPA3069 MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA3069 is ideal for military radar systems.
Lead-free and Ro HS pliant.
Key Features
- Frequency Range: 2.7 - 3.5 GHz
- PSAT (PIN=25 d Bm): > 50 d Bm
- PAE (PIN=25 d Bm): > 53 %
- Power Gain (PIN=25 d Bm): > 25 d B
- Bias: VD = 30 V, IDQ = 300 m A, PIN = 25 d Bm
- Package Dimensions:7.00 x 7.00 x 0.85 mm
Performance is typical across frequency. Please reference electrical specification table and data plots for more details.
Functional Block Diagram
48 47 46 45 44 43 42 41 40 39 38 37
1 2 3 4 5 RF In 6 RF In 7 8 9 10 11 12
36 35 34 33 32 31 RF Out 30 RF Out 29 28 27 26 25
13 14 15 16 17 18 19 20 21 22 23 24
Top View
Applications
- Radar
Ordering Information
Part No.
QPA3069TR7 QPA3069EVB
Description
- 3.5 GHz 100 W Ga N Power Amplifier (10 Pcs.)
250 piece 7” reel Evaluation Board for QPA3069
Data Sheet Rev. C, September...