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QPA3069 - 100W GaN Power Amplifier

General Description

2.7

Data Sheet Rev.

8 to +1 V Drain Curren

Key Features

  • Frequency Range: 2.7 .
  •  3.5 GHz.
  • PSAT (PIN=25 dBm): > 50 dBm.
  • PAE (PIN=25 dBm): > 53 %.
  • Power Gain (PIN=25 dBm): > 25 dB.
  • Bias: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm.
  • Package Dimensions:7.00 x 7.00 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram 48 47 46 45 44 43 42 41 40 39 38 37 1 2 3 4 5 RF In 6 RF In 7 8 9 10 11 12 36 3.

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Datasheet Details

Part number QPA3069
Manufacturer Qorvo
File Size 768.95 KB
Description 100W GaN Power Amplifier
Datasheet download datasheet QPA3069 Datasheet

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QPA3069 ® 2.7 – 3.5 GHz 100 W GaN Power Amplifier Product Overview Qorvo’s QPA3069 is a packaged, high-power S-band amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process (QGaN25). Covering 2.7 – 3.5 GHz, the QPA3069 provides 50 dBm of saturated output power and 25 dB of large-signal gain while achieving 53% poweradded efficiency. The QPA3069 is packaged in a 7 mm x 7 mm 48-pin plastic overmolded package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA3069 MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA3069 is ideal for military radar systems. Lead-free and RoHS compliant. Key Features • Frequency Range: 2.7 – 3.