QPA3055P Datasheet | Qorvo

® 100 W S-Band Ga N Power Amplifier Product Overview Qorvo’s QPA3055P is a packaged, high-power S-band amplifier fabricated on Qorvo’s production 0.25 um Ga N on Si C process (QGa N25). Covering 2.9 -  3.5 GHz, the QPA3055P provides 100 W of saturated output power and 25 d B of large-signal gain while achieving 53% poweradded efficiency. The QPA3055P is packaged in a 10-lead 15.2 x 15.2 mm bolt-down package with a Cu base for superior thermal management. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both short and long pulse operations. The QPA3055P MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA3055P is ideal for both mercial and military radar systems. Ro HS pliant. Key Features - Frequency Range: 2.9 -  3.5 GHz - PSAT (PIN=25 d Bm): 50 d Bm - PAE (PIN=25 d Bm): > 53 % - Power Gain (PIN=25 d Bm): 25 d B - Bias: VD = 30 V, IDQ = 300 m A, PIN = 25 d Bm - Alt. Bias: VD = 30 V, IDQ = 1500 m A, PIN = 22 d Bm - Characterized at PW = 15 ms, DC = 30%, and PW = 100 us, DC = 10% - Package Dimensions: 15.2 x 15.2 x 3.5 mm Functional Block Diagram Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications - Radar Ordering Information Part No. QPA3055PS2 QPA3055PEVB1 Description 100 W S-Band Ga N Power Amplifier (10 Pcs.) Samples (2 pcs.) Evaluation Board for QPA3055P Data Sheet Rev. C, July 2022 1 of...