QPD1006 - RF IMFET

Qorvo

General Description

1.2

Datasheet Rev.

1.4 GHz, GaN RF IMFET Absolute Maximum Ratings1 Recommended Operating Conditions1 Parameter Rating Units Breakdown Vo

Key Features

Frequency: 1.2 to 1.4 GHz.
Output Power (P3dB)1: 313 W (CW), 468 W (Pulsed).
Linear Gain1: 17.5 dB (CW), 17.8 dB (Pulsed).
Typical DEFF3dB1: 55% (CW), 62.2% (Pulsed).
Operating Voltage: 45 V (CW), 50 V (Pulsed).
Low thermal resistance package.
Pulse capable Note 1: @ 1.3 GHz, 25 °C.

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QPD1006 rf imfet by Qorvo - Datasheet Preview

Datasheet Details

Part number	QPD1006
Manufacturer	Qorvo
File Size	643.52 KB
Description	RF IMFET
Datasheet	QPD1006 Datasheet

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Full PDF Text Transcription (Reference)

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QPD1006 450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and CW operations. ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram NI-50CW Key Features • Frequency: 1.2 to 1.4 GHz • Output Power (P3dB)1: 313 W (CW), 468 W (Pulsed) • Linear Gain1: 17.5 dB (CW), 17.8 dB (Pulsed) • Typical DEFF3dB1: 55% (CW), 62.2% (Pulsed) • Operating Voltage: 45 V (CW), 50 V (Pulsed) • Low thermal resistance package • Pulse capable Note 1: @ 1.