QPD1003 Key Features
- Frequency: 1.2 to 1.4 GHz
- Output Power (P3dB)1: 540 W
- Linear Gain1: 19.9 dB
- Typical PAE3dB1: 66.7%
- Operating Voltage: 50 V
- Low thermal resistance package
- Pulse capable
- Part: QPD1003
- Manufacturer: Qorvo
- Size: 1.07 MB
Related Qorvo Datasheets
| Part Number | Description |
|---|---|
| QPD1006 | RF IMFET |
| QPD1011 | 7W GaN RF Input-Matched Transistor |
| QPD1013 | GaN RF Transistor |
| QPD1018 | GaN RF IMFET |
| QPD1019 | GaN RF IMFET |
QPD1003 Description
1.2 1.4 GHz RF IMFET 1.2 1.4 GHz EVB Datasheet Rev. E, June 14, 2019 | Subject to change without notice - 1 of 18 - .qorvo. 410 +42 320 −65 to +150 V V A mA W dBm °C °C Notes:.