QPD1003 - GaN RF IMFET

Qorvo

General Description

1.2 1.4 GHz RF IMFET 1.2

Datasheet Rev.

1.4 GHz, GaN RF IMFET Absolute Maximum Ratings1 Parameter Rating Units Breakdown Voltage,BVDG Gate Voltage Ran

Key Features

Frequency: 1.2 to 1.4 GHz.
Output Power (P3dB)1: 540 W.
Linear Gain1: 19.9 dB.
Typical PAE3dB1: 66.7%.
Operating Voltage: 50 V.
Low thermal resistance package.
Pulse capable Note 1: @ 1.3 GHz.

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QPD1003 gan rf imfet by Qorvo - Datasheet Preview

Datasheet Details

Part number	QPD1003
Manufacturer	Qorvo
File Size	1.07 MB
Description	GaN RF IMFET
Datasheet	QPD1003 Datasheet

Full PDF Text Transcription for QPD1003 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for QPD1003. For precise diagrams, and layout, please refer to the original PDF.

QPD1003 500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 G...

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ally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations. ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram Key Features • Frequency: 1.2 to 1.4 GHz • Output Power (P3dB)1: 540 W • Linear Gain1: 19.9 dB • Typical PAE3dB1: 66.7% • Operating Voltage: 50 V • Low thermal resistance package • Pulse capable Note 1: @ 1.3 GHz Applications • Military radar • Civil

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