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QPD1006 - RF IMFET

General Description

1.2  

Datasheet Rev.

1.4 GHz, GaN RF IMFET Absolute Maximum Ratings1 Recommended Operating Conditions1 Parameter Rating Units Breakdown Vo

Key Features

  • Frequency: 1.2 to 1.4 GHz.
  • Output Power (P3dB)1: 313 W (CW), 468 W (Pulsed).
  • Linear Gain1: 17.5 dB (CW), 17.8 dB (Pulsed).
  • Typical DEFF3dB1: 55% (CW), 62.2% (Pulsed).
  • Operating Voltage: 45 V (CW), 50 V (Pulsed).
  • Low thermal resistance package.
  • Pulse capable Note 1: @ 1.3 GHz, 25 °C.

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Datasheet Details

Part number QPD1006
Manufacturer Qorvo
File Size 643.52 KB
Description RF IMFET
Datasheet download datasheet QPD1006 Datasheet

Full PDF Text Transcription for QPD1006 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for QPD1006. For precise diagrams, and layout, please refer to the original PDF.

QPD1006 450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 G...

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ally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and CW operations. ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram NI-50CW Key Features • Frequency: 1.2 to 1.4 GHz • Output Power (P3dB)1: 313 W (CW), 468 W (Pulsed) • Linear Gain1: 17.5 dB (CW), 17.8 dB (Pulsed) • Typical DEFF3dB1: 55% (CW), 62.2% (Pulsed) • Operating Voltage: 45 V (CW), 50 V (Pulsed) • Low thermal re

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