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TGA2583-SM - 10W GaN Power Amplifier

Description

2.7

Data Sheet Rev.

8

Features

  • Frequency Range: 2.7.
  • 3.7 GHz.
  • PSAT: 41.4 dBm.
  • PAE: 50 %.
  • Small Signal Gain: 33 dB.
  • Return Loss: 12 dB.
  • Bias: VD = 25.
  • 32 V (CW or Pulsed), IDQ = 175 mA.
  • Pulsed VD: PW = 100 us, DC = 10 %.
  • Package Dimensions: 5.0 x 5.0 x 1.625 mm Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 RF OUT 3 4 5 6 7 8 24 23 22 RF IN 21 20 19 18 17 9 10 11 12 13 14 15 16 Top View.

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Datasheet Details

Part number TGA2583-SM
Manufacturer Qorvo
File Size 1.07 MB
Description 10W GaN Power Amplifier
Datasheet download datasheet TGA2583-SM Datasheet
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Full PDF Text Transcription

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TGA2583-SM ® 2.7 to 3.7 GHz, 10 W GaN Power Amplifier Product Overview Qorvo’s TGA2583-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.7 GHz. The TGA2583-SM is designed using Qorvo’s production 0.25 μm GaN on SiC process (QGaN25). The TGA2583-SM typically provides 41.4 dBm of saturated output power, > 50% power-added efficiency, and 33 dB small signal gain. It can operate under both pulse and CW conditions. The TGA2583-SM is available in a low-cost, surface mount 32 lead 5 x 5 AIN QFN. It is ideally suited to support both commercial and defense related radar applications. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 ohms. Lead-free and RoHS compliant Air Cavity Package Key Features • Frequency Range: 2.7–3.7 GHz • PSAT: 41.
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