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TGA2583 - GaN Power Amplifier

General Description

TriQuint’s TGA2583 is an S-band MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25).

Covering 2.7-3.7GHz, the TGA2583 provides 10W of saturated output power and 33dB of small signal gain while achieving 54% poweradded efficiency.

Key Features

  • Frequency Range: 2.7.
  • 3.7GHz.
  • PSAT: 40.5dBm at 25V.
  • PAE: 54%.
  • Small Signal Gain: 33dB.
  • Input Return Loss: >18dB.
  • Output Return Loss: >12dB.
  • Bias: VD = 25-32V (CW or Pulsed), IDQ = 175mA, VG = -2.3V Typical.
  • Pulsed VD: PP = 1ms, DC = 10%.
  • Chip Dimensions: 3.0 x 1.9 x 0.10 mm Functional Block Diagram 2 34 56 1 J1 RF In 7 J2 RF Out General.

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Datasheet Details

Part number TGA2583
Manufacturer TriQuint Semiconductor
File Size 538.78 KB
Description GaN Power Amplifier
Datasheet download datasheet TGA2583 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  Commercial and military radar TGA2583 2.7 – 3.7GHz 10W GaN Power Amplifier Product Features  Frequency Range: 2.7 – 3.7GHz  PSAT: 40.5dBm at 25V  PAE: 54%  Small Signal Gain: 33dB  Input Return Loss: >18dB  Output Return Loss: >12dB  Bias: VD = 25-32V (CW or Pulsed), IDQ = 175mA, VG = -2.3V Typical  Pulsed VD: PP = 1ms, DC = 10%  Chip Dimensions: 3.0 x 1.9 x 0.10 mm Functional Block Diagram 2 34 56 1 J1 RF In 7 J2 RF Out General Description TriQuint’s TGA2583 is an S-band MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25). Covering 2.7-3.7GHz, the TGA2583 provides 10W of saturated output power and 33dB of small signal gain while achieving 54% poweradded efficiency.