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3CG640 - PNP Silicon High Frequency Middle Power Transistor

Key Features

  • 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. Make up push pull amplifying circuit with NPN. 4. Quality Class: GS, G. Implementation of standards: QZJ840611.

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Datasheet Details

Part number 3CG640
Manufacturer Qunli Electric
File Size 29.89 KB
Description PNP Silicon High Frequency Middle Power Transistor
Datasheet download datasheet 3CG640 Datasheet

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Part Number Description
3CG708 PNP Silicon High Frequency Middle Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG640, 3CG708 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. Make up push pull amplifying circuit with NPN. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Symbols Total Dissipation Max.