3DD167
Features
: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+
TECHNICAL DATA:
Parameter name
Symbols Unit
Collector-Emitter Voltage VCEO V
Collector-Emitter Breakdown Voltage
V(BR)CEO V
C-Base Breakdown Voltage
V(BR)CBO V
Emitter-Base Voltage Max. Collector Current Max. Collector Dissipation Junction Temperature Storage Temperature Collector-Emitter Leakage
Current
VEBO ICM PCM Tjm Tstg
ICEO
V A W °C °C m A
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
DC Current Gain h FE
E-Base Breakdown Voltage V(BR)EBO V
(Ta = 25°C )
Specifications
3DD164
ABCDE F
50 100 150 200 250 300
50 100 150 200 250 300
3DD164: IC=5m A
3DD167: IC=5m A
80 150 200 250 350...
