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Qunli Electric

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3DD169 Datasheet

NPN Silicon Low Frequency High Power Transistor

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Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD164(166), 3DD167(169)
NPN Silicon Low Frequency High Power Transistor
Features:
1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity.
2. Good temperature stability.Excellent thermal fatigue capability.
3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611
4. Use for Low-speed switch,low frequency power amplify,power adjustment.
5. Quality Class: JP, JT, JCT, GS, G, G+
TECHNICAL DATA:
Parameter name
Symbols Unit
Collector-Emitter Voltage VCEO V
Collector-Emitter
Breakdown Voltage
V(BR)CEO V
C-Base Breakdown
Voltage
V(BR)CBO V
Emitter-Base Voltage
Max. Collector Current
Max. Collector Dissipation
Junction Temperature
Storage Temperature
Collector-Emitter Leakage
Current
VEBO
ICM
PCM
Tjm
Tstg
ICEO
V
A
W
°C
°C
mA
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
DC Current Gain
hFE
E-Base Breakdown Voltage V(BR)EBO V
(Ta = 25°C )
Specifications
3DD164
3DD167
ABCDE F
50 100 150 200 250 300
50 100 150 200 250 300
3DD164: IC=5mA
3DD167: IC=5mA
80 150 200 250 350 400
3DD164: IC=5mA
3DD167: IC=5mA
55
10
100 (Tc75°C)
15
150 (Tc75°C)
175
-55~+175
2.0 (A:VCE=30V;B:VCE=50V;
C~F:VCE=100V)
1.5 (IC=5A,IB=0.5A)
1.5 (IC=7.5A, IB=0.75A)
Max.:180,Min.:15
(VCE=5V,IC=5A)
5 (IE=5mA)
Max.:180, Min.:15
(VCE=5V,IC=7.5A)
5 (IE=10mA)
hFE Colored:
Color
hFE
Red
15~25
Orange
25~40
Yellow
40~55
Green
55~80
Blue
80~120
Purple
120~180
Outline and Dimensions:
Contact:Jiandong Lei
Tel.:+86-917-6293906
Fax:+86-917-6297928
sxqlljd@hotmail.com 9


Part Number 3DD169
Description NPN Silicon Low Frequency High Power Transistor
Maker Qunli Electric
Total Page 1 Pages
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