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2N5262 - Power Transistors

Features

  • "Modified TO-ag".
  • Fast switching at lA: ton = 30 ns max. toft. = 60 ns max.
  • High voltage ~tings.
  • High. . poweripation.
  • atings.
  • High dc beta at lA - 25 min.
  • Low saturation voltage at 1 A: 0.5 V typo.
  • Maximum.
  • area-af-operation curves for de and pulse operation.
  • Hermetic "low-profile T()'39" package.
  • Meets MI L-5-19500 specifications RCA.
  • 2N5262- is a silicon n-p.
  • n, epitaxial planar. tranSlstorwith charac.

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Datasheet Details

Part number 2N5262
Manufacturer RCA
File Size 361.48 KB
Description Power Transistors
Datasheet download datasheet 2N5262 Datasheet
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Full PDF Text Transcription

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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 313 oornm Power Transistors Solid State Division 2N5262 Silicon N-P-N High-Speed Switching Transistor For Memory-Driver Service in Data-Processing Equipment and Other Critical Industrial Applications Features: "Modified TO-ag" • Fast switching at lA: ton = 30 ns max. toft.= 60 ns max. • High voltage ~tings • High..power.....ipation .•atings • High dc beta at lA - 25 min. • Low saturation voltage at 1 A: 0.5 V typo • Maximum·area-af-operation curves for de and pulse operation • Hermetic "low-profile T()'39" package • Meets MI L-5-19500 specifications RCA·2N5262- is a silicon n-p·n, epitaxial planar.
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