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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 313
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Power Transistors
Solid State Division
2N5262
Silicon N-P-N High-Speed Switching Transistor
For Memory-Driver Service in Data-Processing Equipment and Other Critical Industrial Applications
Features:
"Modified TO-ag"
• Fast switching at lA: ton = 30 ns max. toft.= 60 ns max.
• High voltage ~tings
• High..power.....ipation .•atings • High dc beta at lA - 25 min.
• Low saturation voltage at 1 A: 0.5 V typo
• Maximum·area-af-operation curves for de and pulse operation
• Hermetic "low-profile T()'39" package • Meets MI L-5-19500 specifications
RCA·2N5262- is a silicon n-p·n, epitaxial planar.