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2N5293 - Power Transistors

Features

  • o Low saturation voltage- YeE(sat) = 1 Y max. at Ie = 0.5 A (21'15293, 21'15294) = 1 Y max. at Ie = 1 A (21'15295, 21'15296) = 1 Y max. at Ie =' 1.5 A (21'15297, 21'15298) 0YERSAWATT package (molded-silicone plastic) o Maximum safe-area-of-operation curves specified for DC and pulse service RCA-2N5293, 2N5294, 2N5295. 2N5296. 2N5297 and 2N5298.
  • are hometaxial-base silicon n-p-n transistors. They are intended for a wide variety of mediumpower switching and amplifier.

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Datasheet Details

Part number 2N5293
Manufacturer RCA
File Size 685.25 KB
Description Power Transistors
Datasheet download datasheet 2N5293 Datasheet

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Full PDF Text Transcription

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File No. 322 OO(]5LJD Solid State Division Power Transistors 2N5293 2N5294 2N5295 2N5296 2N5297 2N5298 22NN55229953 2N5297 ~ For TO-66 Sockets JEOEC TO·220AA 22NN55229946 2N5298 ~ JEOEC TO·220AB lHIometaxial-Sase, Silicon N-P-N VERSAWATT Transistors General·Purpose Types for Medium-Power Switching and Amplifier Applications in Military, Industrial, and Commercial Equipment . FEATURES o Low saturation voltage- YeE(sat) = 1 Y max. at Ie = 0.5 A (21'15293, 21'15294) = 1 Y max. at Ie = 1 A (21'15295, 21'15296) = 1 Y max. at Ie =' 1.5 A (21'15297, 21'15298) 0YERSAWATT package (molded-silicone plastic) o Maximum safe-area-of-operation curves specified for DC and pulse service RCA-2N5293, 2N5294, 2N5295. 2N5296. 2N5297 and 2N5298* are hometaxial-base silicon n-p-n transistors.
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