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RCA

2N6471 Datasheet Preview

2N6471 Datasheet

Power Transistor

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File No. 0/7 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _...:....-
OU(]5lJ1]
Solid State
Division
Power Transistors
2N6246 2N6247 2N6248
2N6469 2N6470 2N6471 2N6472
JEDEC TO-3
H-1570
5 iliean N-P-N and P-N-P Epitaxial-Base
High-Power Transistors
General-Purpose Types for Switching and
Linear-Amplifier Applications
Features:
• High dissipation capability: 125 W at 25°C
• Low saturation voltages
II Maximum safe-area-of-operation curves
II Hermetically sealed JEDEC TO-3 package
II High gain at high current
.. Thermal-cycling rating curve
RCA-2N6246, 2N6247, 2N6248, and 2N646g.to. are epitaxial-
base silicon p-n-p transistors featuring high gain at high cur-
rent_ RCA-2N6470, 2N6471, and 2N6472· are epitaxial-base
silicon n-p-n transistors. They may be used as complements to
the 2N6469, 2N6246, and 2N6247, respectively_ All of these
devices have a dissipation capability of 125 watts at case
temperatures up to 250 C_ They differ in voltage ratings
and in the currents at which the parameters are controlled_
All are supplied in the JEDEC TO-3 package_
... Formerly RCA Do., Nos, TA7281 , TA7280, TA7279,andTA8724,
respectively.
• Formerly RCA Dev. Nos. TA8726. TA8443, and TA8442, re-
spectively.
Maximum Ratings, Absolute-Maximum Values:
*COLLECTOR,TO-BASE VOLTAGE
, ' , ' ,."
COLLECTOR-TO-EMITTER VOLTAGE:
* With external base-ta-emitter
resistance (RBE) = 100 n_ ,
With base open. . . . . .
*EMITTER-TO-BASE VOLTAGE,
-CONTINUOUS COLLECTOR CURRENT.
'CONTINUOUS BASE CURRENT ,
'TRANSISTOR DISSIPATION:
At case temperatures up to 25°C .
At case temperatures above 2SoC .
-TEMPERATURE RANGE:
Storage & Operating (Junction).
-PIN TEMPERATURE (During Solderingl:
At distances ~ 1/32" (0.8 mm) from
seating plane for 10 s max. . . . .
* In accordance with JEDEC registration data formal (JS·6 RDF·21.
• For p-n-p devices, voltage and current values are negative.
N-P-N
P-N-P
, VCBO
VeER
VCEO
VEBO
IC
IB
PT
2N6470 2N6471 2N6472
2N6469t 2N6246+ 2N6247+ 2N624S+
50 70
90 110
V
50 70
40 60
55
15 15
55
90 110 V
80 100 V
5 5V
15 10 A
5A
125 125 125 125 W
See Fig. 3
-65 to +200
°c
+235
°C
8-74 323




RCA

2N6471 Datasheet Preview

2N6471 Datasheet

Power Transistor

No Preview Available !

2N6246-7-B
2N6469-70-1-2
ELECTRICAL CHARACTERISTICS FOR P-N-P TYPES, At case temperature ITcl = 2ft' C unless otherwise specified
TEST CONDITIONS
LIMITS
File No_ 677
CHARACTERISTIC
SYMBOL
Vd,
Collector-Cutoff Current:
With external base-emitter
resistance lASE' '" 1Don
V BE =1.5 V
AtTC = 150°C
V BE= 1.5 V
With base open
• Emitter-Cutoff Current.VBE = 5 V
· DC Forward-Current
Transfer Ratio
Collector-ta-Emitter
Sustaining Voltage
With base open
With external base-emitter
resIStance IRSE) " lOOn
· Base-la-Emitter Voltage
leER
ICEX
ICED
IEeo
hFE
VCE
-35
-55
-75
-95
-45
-65
-B5
-100
-45
-55
-70
-90
-20
-30
-40
-50
-4
-4
-4
-4
-4
VCEOlsusl
VCERlsusl
VBE
_4
-4
-4
-4
· Collector-la-Emitter
Saturation Voltage
VCE(satl
· Magnitude of Common·Emltter
Small·Signal Short·CircUit
Forward·Current Transfer Ratio
· (f = 2MHz)
Common·Emitter, Small·Signal,
Short·Circuit, Forward·Current
Transfer Ratio If = 1 kHzl
Thermal Resistance
(Junction·lo·casel
Ih,.1 -4
hI. -4
RIJJC
Ad<
'C 'a
-5'
-7'
-6'
-l{J'
_15a
2N6469
2N6246
2N6247
Min.
Max. Min.
-200
Max. Min.
-200
Max.
-200
-200
-200
-200
-5
-5
-5
-,
-1
-1
-5
20 150
-5
20 100
-1
20 100
2N6248
UNITS
Min. Ma••
pA
200
-200
pA
mA
-5
-1
-1
20 100
mA
mA
-0.2
_40b
_SOb
-BOb
-10ab
-0.2
_4Sb
IS"
-7'
-6'
-5'
-5"
-7'
-6"
-IS'
-IS'
-IS'
-10'
-0.5
-0.7'
··0.6
-5
-3
-4
--2
-3.5
-1.3
-3.5
-6Sb
-2
-1.3
-2.5
-asb
-1.8
-1.3
-3.5
-lOSb
-1.8
-1.3
-J.5
V
V
V
-1
-1 25
25 25 2.
1.4 1.4 1.4 1.4 °C/W
'" In accordance With JEDEC registration data format iJS·6 RDF·2).
a Pulsed; pulse duration" 300 ps, duty factor = 1.8%.
bCAUTION: Sustaining Jloltages VCED(susJ. VCER(sus}. and VCEXfsusJ
MUST NOT be measured on a curve tracer, (See Fig. 2:1)
324


Part Number 2N6471
Description Power Transistor
Maker RCA
Total Page 9 Pages
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