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RCA

2N6481 Datasheet Preview

2N6481 Datasheet

Power Transistor

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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 702
OOCD3LJ1]
Solid State
Division
Power Transistors
2N6479 2N6481
2N6480 2N6482
Radiation-Hardened
Silicon N-P-N Power Transistors
Epitaxial-Planar Types for
Aerospace and Military Applications
(RADIALI
H·1354
Rated for Operation in Radiation Environment.
with Cumulative Neutron Fluenee Levels to 1 x 1014 Neutrons/em2
and Gamma Intensity to 1 x 108 Rad(Sills
RCA types 2N6479, 2N6480, 2N6481, and 2N6482- are
epitaxial silicon n-p-n planar power-switching transistors.
They are designed for aerospace applications in which they
might be subjected to extreme neutron and gamma-ray
exposure.
The 2N6479, 2N6480, 2N6481, and 2N6482 are intended for
use in 5-to-10 ampere high-frequency power inverter service.
Types 2N6479 and 2N6481 differ from types 2N6480 and
2N6482. respectively. in voltage and power ratings. In types
2N6479 and 2N6480, the collector is isolated from the case.
• Formerly RCA Dev. Nos. TAB007, TAS007B, TAB10D, and
TA8100B. respectively.
MAXIMUM RATINGS, Absolute·Maximum Values:
* COLLECTOR·TO·BASE VOLTAGE . . . . . . . .
COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE:
With external base·to·emitter resistance (RBEI ::;; 100 n .
With base open. . . . . . . . .
* EMITTER·TO·BASE VOLTAGE
• CONTINUOUS COLLECTOR CURRENT
• PEAK COLLECTOR CURRENT.
* CONTINUOUS BASE CURRENT .
* TRANSISTOR DISSIPATION:
At case temperatiJres up to 25°C.
At case temperatures above 25°C
• TEMPERATURE RANGE:
Storage and Operating (Junction). . . . . . . .
• TERMINAL TEMPERATURE (During Soldering):
At distance ~ 1/32 in. (0.8 mml from seating plane for
lOs max.
VCBO
VCER(sus)
VCEO(susl
VEBO
'C
* In accordance with JEDEC registration data format JS-6 ROF-1.
2N6479
100
2N6480
100
2N6481
100
80 100 80
60 80 60
66 6
12 12 12
25 25 25
55 5
87 87 117
- - - See Figs. 1,2, and 4
-65 to +200
230
2N6482
100 V
100 V
80 V
6V
12 A
25 A
5A
117 W
°C
°c
372 2·74




RCA

2N6481 Datasheet Preview

2N6481 Datasheet

Power Transistor

No Preview Available !

File No. 702 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N6479-2N6482
ELECTRICAL CHARACTERISTICS. At Case Temperature (Tci = 2fiOC
PRE·RADIATION
CHARACTERISTIC
SYMBOL
Collector Cutoff Current:
With emitter openI
VCB =100V
With base shorted
* With base-emitter junction
reverse-biased
* At TC =lOOoC
* Emitter Cutoff Current
Emitter-ta-Base Voltage:
Ie =2 mA
Collector-ta-Emitter
Sustaining Voltage:
* With base open
With external base-to-
emitter resistance
IRB.E) =100 n
* Collector-ta-Emitter
Saturation Voltage
ICBO
ICES
ICEV
lEBO
VEBO
Vceol sus )
VCERlsus)
VCElsat)
TEST CONDITIONS
VOLTAGE
V de
CURRENT
A de
VCE
VEB
IB
IC
60
100 a
60 a
6
0.2a
02
1.2 12a
LIMITS
2N6479
2N6481
2N6480
2N6482
MIN. MAX. MIN. MAX.
1-
1
UNITS
mA
- 200 -
-1-
- 1-
-2 -
6-
6
200 iJA
1
mA
1
2 mA
-V
60b -
80b -
80b -
0.75'
100b
-
-
0.75
V
V
* Base-ta-Emitter
Saturation Voltage
* DC Forward Current
Transfer Ratio
Second Breakdown
Collector Current:
With base forward-
biased. t = 1 5
Second Breakdown Energy:
With base reverse-
biased, RBE = 100 n,
=L 100 ~H
VBElsat)
hFE
ISlb
ESlb **
2
12
1.2 12a
1.5 -
1.5
12a 20 300 20 300
V
7.3 .- 7.3 -
A
-5
1.25
.-
1.25
mJ
* Saturated Switching Time
(VCC = 30 V, IB1 = IB2):
Rise
Storage
Fall
tr
ts
'f
1.2 12
.- 400
- 400
1.2 12
.- 800
-
800
1.2 12
- 200
-
200
ns
* Magnitude of Common
Emitter Small-Signal
Short Circuit Forward
Current Transfer Ratio:
f =10 MHz
Ihfel
5
1 10 - 10 .-
Collector-ta-Base Feedback
Caoacitance:
VCB-10V,f=1 MHz
COb
.- 400 .- 400
pF
Thermal Resistance:
Junction-ta-Case
ROJC
10
2N6479
2N6481
I2N6480
2Nj82
5 - 2 - 1.5 °C/W
* In accordance with JEDEC registration data format JS-6 ROF-1.
< <a PUlsed; pulse duration 350 jJ.S, duty factor 2%.
b CAUTION: The sustai;-ng voltages VCEo(sus)and VCER(susl MUST NOT be measured on a curve tracer. These sustaining voltages
should be measured by means of the test circuit shown in Fig.13.
373


Part Number 2N6481
Description Power Transistor
Maker RCA
Total Page 7 Pages
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