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40367 Datasheet Preview

40367 Datasheet

Power Transistor

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File No. 215 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
OO(]5LlD
Power Transistors
Solid State
Division
40366-40369
40385
4:iip,.&I ~
JEOECTO~-lr 40369
H-,S70
~.-"
W4O:~O15
JEDEC TO-8
frf
403665
403675
403855
/1\
40366L
40367L
40385L
H·1380
High- Reliability Silicon
N-P-N Power Transistors
For Power Switching and Amplifier Applications
Features
• High reliability assured by five preconditioning steps
• Group A test data included*
• Transistors utilize JEDEC hermetic
packages;
40369-TO·3
40368-TO·8
40366, 40367 t
.
40385 \ See Note at right
These devices are available with either 1%-
inch leads (TO-S package) or %,·inch leads
ITO-39 package). The longer-lead versions are
specified by suffix "L" after the type num-
ber; the shorter-lead versions are specified by
suffix "s" after the type number.
RCA·40366-40369 and 40385 are silicon n·p·n power
transistors derived from JEDEC types 2N2102, 2N1482,
2N1486, 2N1490, and 2N3439. They are specially pre·
conditioned for use in power·switching and amplifier appli·
cations in those instances where high reliability is a requisite.
a High voltage ratings:
VCER = 80 V max. (40366)
VCEV = 100 V max. (40367,40368 & 40369)
VCEO = 350 V max. (40385)
• High power·dissipation capability:
PT = 5 W max. (40366,40367 & 40385)
= 25 W max. (40368)
= 75 W max. (40369)
* Group A test data shown on pages 2 & 3.
MAXIMUM RATINGS, Absolute·Maximum Values:
COLLECTOR·TO·BASE VOLTAGE ....... VCBO
COLLECTOR·TO·EMITTER VOLTAGE:
With external base·to·emitter resistance
(RBE) $.10n ................... VCER
With -1.5 V (VBE) of reverse bia~ ....... VCEV
With base open ...................... VCEO
EMITTER·TO·BASE VOLTAGE ........... VEBO
CONTINUOUS COLLECTOR CURRENT .... IC
CONTINUOUS BASE CURRENT ..••...... IB
TRANSISTOR DISSIPATION:
PT
At case temperature up to 25°C .........
At free·air temperature up to 25°C .•...•.
At temperatures above 25°C ............
TEMPERATURE RANGE:
Storage & Operating (Junction) ..•.......
PIN or LEAD TEMPERATURE (During
soldering) :
At distances? 1/32 in. (0.79 mm)
from seating plane for lOs max.....
40366
120
40367
100
40368
100
40369
100
40385
450
80
100 100 100
65 55
55 55 350
7 12 12 10 7
1.5 3
6
1 1.5 3
5 5 25 75 10
-+-- Derate linearly to 0 wat~ at 200°C -
. -65 to 200
255 255 235 235 255
V
V
V
V
V
A
A
W
W
°c
°c
9·73 411




RCA

40367 Datasheet Preview

40367 Datasheet

Power Transistor

No Preview Available !

40366-40369 and 40385
File No. 215
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI = 25°C
Characteristic
Collector·Cutor! Currl'nl
Symbol
leBO
ICr,:O
TEST CONDITIONS
Voltage
Current
V de
rnA de
Vea VeE VEO Ie I a
30
60
LIMITS
40366
40367
40368
Min, Ma•• Min, Max. Min_ Ma••
4.0 9.0
2.0
40369
40385
Min. MOJII, Min. Mo••
10
Unit.
~A
nA
300 20 ~A
ICEV
450 1.5
500 ~A
Emitter-CutoU Current
lEBO
DC Forward-Current
Transfer Ratio
hFE
Collector-ta-Base
Breakdown Voltage
Collector-ta-Emitter
Breakdown Voltage
Emitter-la-Base
Breakdown Voltage
(IE =0.1 rnA).
Collector-to-Emi tter
Sustaining Voltage:
With external
base-to--emitter
resistance
(RBE) • 10 il
Wi th base open
BVeB,
BV CEV
BVEBO
VCER(sus)
VC~O(sus)
0
0
10
12
200
750
1500
10 0.01
10 0.1
10
10 20
10 150"
10 500"
10 1000·
1.5 0.1
1.5 0.25
5.0
2.0 5.0
20
6.0
35 100
35 100
25 75
10
20
~O
40 160
40 120
25
10
120
100 100
100
7.0
100·
80
50 55
350
100·
65
100 55 55
Collector-la-Emitter
Saturation Voltage
VCE(sat)
50
150· 15
0.5
0.5
200 10
1.4
750 40
0,75
1300 100
1.0
Base-to-Emitter
Saturation Voltage
VBE(sal)
150· 15
50
1.1
1.3
Base-to-Emitter Voltage VBE
200
750
1500
3.0
2.5
2.5
= =• Pulsed; pulse dumtion 30011 s, duty factor 1.8%.
nA
~A
~A
~A
V
V
V
.V
V
V
V
V
412


Part Number 40367
Description Power Transistor
Maker RCA
Total Page 5 Pages
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