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40537 - Power Transistor

Features

  • Planar construction provides low-noise and low.
  • leakage characteristics.
  • Gain bandwidth product (fT) = 50 MHz min.
  • 40538 is p.
  • n.
  • p complement of 40539' rTh-_-d-'-Yic-"-,-,,-,,,-j-'. -b-',-w-i-Ih-'-i-lh-er-. -,%-,.
  • Low saturation voltage: VCE(sat) = -1.1 V max. (40537) = -2.0 V max. (40538).
  • High pulse beta at high collector current: hFE = 50 min. at IC = -50 mA (40537) inch I. ads CTO'& package) or )S:.
  • inch Iuds (TO-39 package). The.

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Datasheet Details

Part number 40537
Manufacturer RCA
File Size 146.15 KB
Description Power Transistor
Datasheet download datasheet 40537 Datasheet

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Full PDF Text Transcription

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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 302 DDJ]3LJD Solid State Division Power Transistors 40537 40538 3J 40537L 40538L JEDEC TOoS H·13BO 40537S 40538S JEDEC TO-39 H·t381 Silicon P-N-P Transistors For Driver and Output Stages in Audio-Amplifier Circuits Features: • Planar construction provides low-noise and low·leakage characteristics • Gain bandwidth product (fT) = 50 MHz min. • 40538 is p·n·p complement of 40539' rTh-_-d-'-Yic-"-,-,,-,,,-j-'.-b-',-w-i-Ih-'-i-lh-er-.-,%-..., • Low saturation voltage: VCE(sat) = -1.1 V max. (40537) = -2.0 V max. (40538) • High pulse beta at high collector current: hFE = 50 min. at IC = -50 mA (40537) inch I.ads CTO'& package) or )S:·inch Iuds (TO-39 package).
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