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RCA1000 - Power Transistor

Key Features

  • High de current gain: hFE = 1000 min_ at IC = 3 A.
  • Monolithic construction with built-in bas8e smitter shunt resistors RCA-l000 and 1001 are monolithic silicon n-p-n Darlington transistors intended for medium-power.

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Datasheet Details

Part number RCA1000
Manufacturer RCA
File Size 145.08 KB
Description Power Transistor
Datasheet download datasheet RCA1000 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 594 DDLn3LJD Solid State Division Power Transistors RCA1000 RCA1001 a-Ampere Silicon N-P-N Darlington Power Transistors For Use as Output Devices in General-Purpose Switching and Amplifier Applications JEOEC TO·3 Features: • High de current gain: hFE = 1000 min_ at IC = 3 A • Monolithic construction with built-in bas8e smitter shunt resistors RCA-l000 and 1001 are monolithic silicon n-p-n Darlington transistors intended for medium-power applications as output devices. The double epitaxial construction of these units provides good forward and reverse second-breakdown capability_ Their high gain makes it possible for them to be driven directly from integrated circuits.