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DDLn3LJD
Solid State Division
Power Transistors
RCA1000 RCA1001
a-Ampere Silicon N-P-N Darlington Power Transistors
For Use as Output Devices in General-Purpose Switching and Amplifier Applications
JEOEC TO·3
Features:
• High de current gain: hFE = 1000 min_ at IC = 3 A
• Monolithic construction with built-in bas8e smitter shunt resistors
RCA-l000 and 1001 are monolithic silicon n-p-n Darlington transistors intended for medium-power applications as output devices. The double epitaxial construction of these units provides good forward and reverse second-breakdown capability_ Their high gain makes it possible for them to be driven directly from integrated circuits.
RCA1000 Datasheet
