Datasheet Details
| Part number | BC858 |
|---|---|
| Manufacturer | RECTRON |
| File Size | 75.38 KB |
| Description | PNP Silicon Planar Epitaxial Transistors |
| Datasheet |
 BC858 Datasheet
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Download the BC858 datasheet PDF. This datasheet also includes the BC856 variant, as both parts are published together in a single manufacturer document.
| Part number | BC858 |
|---|---|
| Manufacturer | RECTRON |
| File Size | 75.38 KB |
| Description | PNP Silicon Planar Epitaxial Transistors |
| Datasheet |
BC858 Datasheet
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Collector Base Voltage Collector Emmitter Voltage (+VBE = 1V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 60 oC Storge Temperature Junction Temperature SYMBOL VCBO VCEX VCEO VEBO IC ICM IEM IBM Ptot** Tstg Tj BC856 80 80 65 Thermal Resistance From junction to tab From tab to soldering points From soldering points to ambient Rth(j-t) Rth(t-s) Rth(s-a)** **Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm BC857 50 50 45 5 100 200 200 200 250 -55 to +150 150 60 280 90 BC858 30 30 30 UNITS V V V V mA mA mA mW oC oC K/W www.rectron.com 1 of 2 BC856 BC857 BC858 Electrical Characteristics (at Ta=25 oC unless otherwise specified) DESCRIPTION Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Knee Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC VBE(on)* IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V VCE(Sat) IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VBE(Sat)*** IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VCEK IC = 10mA, -IB = Value for which IC = 11mA at -VCE = 1V IC = 2mA, VCE = 5V BC856 hFE BC857/BC858 BC856A/BC857A/BC858A Collector Capacitance Transition Frequency Small Signal Current Gain Noise Figure CC fT | hfe | NF BC856B/BC857B/BC858B BC857C/BC858C IE = ie = 0, VCB = 10V, f = 1MHZ IC = 10mA, VCB = 5V, f = 100MHZ IC = 2mA, VCE = 5V, f= 1kHZ BC856 BC857/BC858 IC = 0.2mA, VCE = 5V RS= 2k ohm, f = 1KHZ, B= 200HZ *VBE (on) decreases by about 2mV/K with increase temperature.
***VBE (Sat) decreases by about 1.7mV/K with increase temperature.
MIN TYP MAX 15 4 0.6 0.75 0.82 0.30 0.65 0.7 0.85
PNP Silicon Planar Epitaxial Transistors BC856 BC857 BC858 Pin configuration: 1.
BASE 2.
EMITTER 3.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BC858 | PNP Transistor | nexperia |
 |
BC858 | SILICON PLANAR EPITAXIAL TRANSISTORS | CDIL |
 |
BC858 | PNP Silicon Epitaxial Transistors | Kingtronics |
 |
BC858 | PNP Transistor | GME |
 |
BC858 | PNP GENERAL PURPOSE TRANSISTORS | Pan Jit International |
| Part Number | Description |
|---|---|
| BC858A | PNP Transistor |
| BC858B | SOT-23 BIPOLAR TRANSISTORS |
| BC858C | PNP Transistor |
| BC856 | PNP Silicon Planar Epitaxial Transistors |
| BC856A | BIPOLAR TRANSISTORS |
| BC856B | PNP Transistor |
| BC857 | PNP Silicon Planar Epitaxial Transistors |
| BC857A | PNP Transistor |
| BC857C | PNP Transistor |
| BC807-16W | Silicon PNP Transistor |