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Renesas Electronics Components Datasheet

BCR08AM Datasheet

Triac

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BCR08AM
MITMSIUTBSIUSBHIISSHEI MSEICMOICNODUNCDTUOCRTO<RTR<ITARCI>AC>
BCR0BC8RA0M8AM
LOWLOPWOWPOEWR EURSEUSE
PLAPNLAARNAPARSPSAIVSASTIVIOATNIOTYNPTEYPE
OUTLINE DRAWING
Dimensions
in mm
φ5.0 MAX.
VOLTAGE
CLASS
TYPE
NAME
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ 0.7
1.25 1.25
IT (RMS) ..................................................................... 0.8A
VDRM ....................................................................... 600V
IRGT I, IRGT III ............................................................ 5mA
APPLICATION
Electric fan, air cleaner, other general purpose control applications
➀➂➁
JEDEC : TO-92
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage 1
Non-repetitive peak off-state voltage 1
Voltage class
12
600
720
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t
I2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
Weight
1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=56°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
Ratings
Unit
0.8
A
8
A
0.26
A2s
1
W
0.1
W
6
V
0.5
A
40 ~ +125
°C
40 ~ +125
°C
0.23
g
Mar. 2002


Renesas Electronics Components Datasheet

BCR08AM Datasheet

Triac

No Preview Available !

MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VRGT I
VRGT III
IRGT I
IRGT III
VGD
Rth (j-c)
(dv/dt)c
Repetitive peak off-state current
On-state voltage
Gate trigger voltage 2
Gate trigger current 2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Tj=125°C, VDRM applied
Tc=25°C, ITM=1.2A, Instantaneous measurement
II
Tj=25°C, VD=6V, RL=6, RG=330
III
II
Tj=25°C, VD=6V, RL=6, RG=330
III
Tj=125°C, VD=1/2VDRM
Junction to case 3
4
Tj=125°C
2. Measurment using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Limits
Min. Typ. Max.
1.0
2.0
2.0
2.0
5
5
0.1
60
0.5
Unit
mA
V
V
V
mA
mA
V
°C/ W
V/µs
Test conditions
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=0.4A/ms
3. Peak off-state voltage
VD=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
TIME
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
101
7
Tc = 25°C
5
3
2
100
7
5
3
2
101
1.0 1.5 2.0 2.5 3.0 3.5 4.0
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
10
9
8
7
6
5
4
3
2
1
0
100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002


Part Number BCR08AM
Description Triac
Maker RENESAS
PDF Download

BCR08AM Datasheet PDF






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