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BCR08AS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions in mm
4.4±0.1 1.6±0.2
1.5±0.1
0.8 MIN 2.5±0.1 3.9±0.3
123
• IT (RMS) ..................................................................... 0.8A • VDRM ....................................................................... 600V • IFGT !, IRGT !, IRGT # .............................................. 5mA • IFGT # ..................................................................... 10mA
0.5±0.07 0.4±0.07
1.5±0.1 1.5±0.1 (Back side)
0.4
+0.03 –0.
BCR08AS Datasheet
